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Home> Products> High Temperature Sintering Furnace> Silicon Carbide Sintering Furnace> Silicon carbide recrystallization sintering furnace
Silicon carbide recrystallization sintering furnace
Silicon carbide recrystallization sintering furnace
Silicon carbide recrystallization sintering furnace

Silicon carbide recrystallization sintering furnace

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Silicon carbide recrystallization sintering furnace is mainly used in the fields of high-temperature alumina and zirconia products, daily ceramics, sanitary ware, electric porcelain, electronic ceramics, metallurgy, chemical industry and other silicon carbide recrystallization sintering furnaces. It can also meet the requirements of silicon nitride combined with silicon carbide and reaction Sintered silicon carbide industry use.

Silicon carbide recrystallization sintering furnace Product parameters

1. Model: YHGYL-THL45/45-50
2. Heating method: isostatic graphite resistance heating
3. Power control: low DC voltage, high current mode
4. The design power is 60KW, and the actual production power is not more than 50KW.
5. Power supply: three-phase five-wire system, three-phase 380V, frequency 50HZ
6. Design temperature: 2100℃, long-term common temperature is 2000℃;
7. Cooling method: natural cooling
8. Effective discharge space: 450mm wide, 450mm high, 500mm deep
9. Heating rate: When loading, the average heating rate below 1000℃ is 5℃/min, the average heating rate between 1000-1800℃ is 5℃/min, and the average heating rate between 1800-2250℃ is 3℃/min.
10. Temperature control accuracy: RT room temperature -2000℃≤±2℃
11. Power supply configuration: integrated with furnace body
12. Furnace body type: horizontal front door discharging
13. Working gas content in the furnace: vacuum or Ar, N2, NH? and other gases (slight positive pressure), vacuum replacement;
14. Temperature uniformity: ≤±3℃ (evaluated after 30 minutes of constant temperature);
15. Temperature measurement: single-zone tungsten sleeve tungsten-rhenium thermocouple temperature measurement
16. Temperature control: Japan Shimaden FP23, PID intelligent temperature controller program control (temperature control accuracy: ±0.1℃) and manual control;
17. Protection method: PLC+touch screen+sound and light alarm
18. Vacuum system configuration: 2H-70 slide valve pump
19. Vacuum measurement: resistance + capacitance film vacuum gauge, measuring range 0-105pa
20. Pressure rise rate: vacuum to 5Pa, stop the pump for 30 minutes and start timing, pressure rise per hour ≤ 10P
21. Cold ultimate vacuum degree: ≤5Pa (in clean, cold, empty furnace state)
22. Empty furnace vacuuming time ≤20min (empty furnace, room temperature, refer to GB/T10066.1-2004 for testing.)
23. Maximum pressure in the furnace 0.02Mpa
24. Explosion-proof valve trip pressure: 0.07Mpa
25. Cooling system: All circulating water pipes are well sealed and there is no leakage during use;
26. Electrical control: Siemens PLC + Delta 15-inch touch screen. Key parameters such as vacuum, temperature, and power can be queried in real time and historically, and can be exported through a USB flash drive and set up a paperless recorder.
27. Imported materials are used for key components, such as temperature control instruments and thermometers.
28. Opening method: manual
29. Material entry and exit method: equipped with special entry and exit trucks
30. Paint color: main body milky white, frame sky blue, base black

In view of the serious temperature rise lag in the low-temperature section of the furnace, multi-stage AI self-learning PID and temperature control curve fitting technology are used to make the temperature control accuracy in the low-temperature section and high-temperature section consistent, reaching ≤±2°C.

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Silicon Carbide Sintering Furnace Product Characteristics

1. The maximum working temperature is 2300℃, and the common temperature is 2250℃.
2. Working atmosphere: air atmosphere, vacuum sintering or reducing atmosphere sintering (slight positive pressure)
3. Temperature measurement: thermocouple and far-infrared optical temperature measurement component form
4. Temperature control: program control and manual control; Temperature control accuracy: ±0.1℃

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